ESD: RF Technology and Circuits: Presents methods for co-synthesizisng ESD networks for RF applications to achieve improved performance and ESD protection of semiconductor chips; discuss the method of RF ESD design capacitance load transformation, matching network co-synthesis, capacitance shunts, shunt inductive impedance isolation, the burden of cancellation methods, distributed loads, emitter degeneration, buffering and ballasting; check ESD protection and design of active and passive elements in RF complementary metal-oxide-semiconductor (CMOS), RF laterally spreading metal-oxide semiconductor (LDMOS), RF BiCMOS Silicon Germanium (SiGe), RF BiCMOS Silicon Germanium Carbon (SiGeC), and Gallim arsenat technology; provide information about the methodology ESD RF testing, RF degradation effects, and failure mechanisms for devices, circuits and systems; highlights RF ESD design mixed-signal integration digital circuits, analog and RF; set examples of RF ESD design CAD methodologies; includes state-of-the-art RF ESD input circuits, and voltage-triggered to RC-triggered power clamp ESD networks in RF technologies, as well as off-chip protection concepts . After a series of books on ESD author, this book will be a thorough overview of ESD in RF technology for RF semiconductor chip and ESD engineers.